What is the damascene process used for?
are generally used for making barrier layers. On this barrier layer a thin seed layer of copper is deposited because without this seed layer, deposition of copper electrochemically on the wafer is not possible. The electroplating process is used for copper deposition.
What is the benefit of using dual damascene process?
First, it avoids that Cu atoms migrate into the interlevel dielectric (ILD), and second, it provides good adhesion to Cu [6].
What is single Damascene?
In the single damascene process, the via layer and the trench layer are deposited and structured one after each other, so that there are more process steps needed (ILD deposition → VIA structuring → copper deposition → planarization → ILD deposition → trench structuring → copper deposition → planarization).
What is semi Damascene?
Semi-damascene is an alternative technique capable of solving each of these challenges. This technique has a different process flow, starting with patterning the vias in a dielectric layer and filling them with a metal deposition. Metal is then patterned by direct etch.
What metal has traditionally been used for interconnect what is its replacement and why?
Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance.
Is aluminum a semiconductor?
Aluminium nitride, aluminium phosphide, aluminium phosphide, aluminium antimonide and aluminium arsenide are examples of semiconductor materials. Semiconductor materials have the bandgap between the conductors and insulators.
What is dual damascene copper interconnection process?
Dual damascene is the new technique used to form interconnect structures based on conductive copper metal lines inlaid into an oxide or low dielectric constant (k) nonconductive layer. The dual damascene technique forms trenches and vias (hence dual or twice used) into which copper is eventually electroplated.
Which type of material is suitable for making the contacts in interconnect hierarchy?
It can be seen that, within an IC structure, metals are used as gate and electrode contacts (Tungsten Silicide, light region above the source and drain), contact plugs (Tungsten Plug) and interconnects (Copper 1 through Copper 5)….Figure 1.
| Material | Resistivity (Ω-m) | Conductivity (/Ω-m) |
|---|---|---|
| Carbon (Graphite) | 3-60 x 10-5 | — |
What does an interconnect do?
In integrated circuits (ICs), interconnects are structures that connect two or more circuit elements (such as transistors) together electrically. The design and layout of interconnects on an IC is vital to its proper function, performance, power efficiency, reliability, and fabrication yield.
What is dual Damascene?
Dual damascene is the new technique used to form interconnect structures based on conductive copper metal lines inlaid into an oxide or low dielectric constant (k) nonconductive layer. The dual damascene technique forms trenches and vias (hence dual or twice used) into which copper is eventually electroplated.
What is co-copper dual Damascene wiring?
Copper dual damascene wiring, with lower resistivity than Al, is now fully mainstream and will remain the interconnect metal for foreseeable technology nodes. One method for controlling the cleaning process with the Cu dual damascene devices is to move from wet benches to spray tools or single-wafer cleaning systems.
How to clean cu dual Damascene wafers?
One method for controlling the cleaning process with the Cu dual damascene devices is to move from wet benches to spray tools or single-wafer cleaning systems. Single-wafer cleaning has been gaining acceptance in the back end of the line process especially for 300 mm wafers at nodes less than 130 nm.
What are the features of incoming structure?
The incoming structure is depicted in Figure 4.12A and typically consists of dual-damascene via and trench features. When filled with metal, the trenches will enable intralevel signal transmission, while the vias span the full height of the layer and provide electrical contact to the wiring levels directly above and below.